2026-04-18T11:10:28Z https://icatplus.esrf.fr/oaipmh/request

oai:icatplus.esrf.fr:inv/2119588632 2025-06-02T06:00:28.744Z

4.2 EI 10.15151/ESRF-ES-2119588632 Enrico TALAMAS SIMOLA Enrico Talamas Simola 0000-0001-5468-6712 Enrico TALAMAS SIMOLA Enrico Talamas Simola 0000-0001-5468-6712 Cedric CORLEY-WICIAK Cedric Corley-Wiciak 0000-0002-0179-2957 Cedric CORLEY-WICIAK Cedric Corley-Wiciak 0000-0002-0179-2957 Carsten Detlefs Carsten Detlefs 0000-0003-2573-2286 AGNIESZKA CORLEY-WICIAK Agnieszka Corley-Wiciak 0000-0003-0974-1190 AGNIESZKA CORLEY-WICIAK Agnieszka Corley-Wiciak 0000-0003-0974-1190 Fabrizio ROVARIS Fabrizio Rovaris 0000-0002-0729-5409 Fabrizio ROVARIS Fabrizio Rovaris 0000-0002-0729-5409 Elena CAMPAGNA Elena Campagna 0000-0001-7121-8806 Yaozhu LI Yaozhu Li 0000-0002-9092-659X Elena CAMPAGNA Elena Campagna 0000-0001-7121-8806 Giovanni CAPELLINI Giovanni Capellini 0000-0002-5169-2823 Giovanni CAPELLINI Giovanni Capellini 0000-0002-5169-2823 Example Institute 2028 Data from large facility measurement 2025-05-29T06:00:00Z/2025-06-02T06:00:00Z 2025-06-02T06:00:00Z I CC-BY-4.0 We will use six-dimensional (6D) dark-field X-ray microscopy (DFXM) at the new beamline ID03 to obtain a detailed view of the strain landscape in parabolic Ge/Si1-xGex quantum wells (pQWs) deposited on GeSi virtual substrates for applications in micro- and optoelectronics. In particular, volumetric mapping of the full strain tensor in these alloyed multilayers with fine spatial resolution will be demonstrated. This data will allow refinement of our Finite Element Method (FEM) models to predict device performance and provide a fundamental understanding of plastic relaxation mechanisms in complex epitaxial heterostructures.