2026-06-01T23:47:44Z https://icatplus.esrf.fr/oaipmh/request

oai:icatplus.esrf.fr:inv/2064079237 2025-04-29T07:23:36.650Z

4.2 EI 10.15151/ESRF-ES-2064079237 JOEL EYMERY Joel Eymery 0000-0002-4216-1166 JOEL EYMERY Joel Eymery 0000-0002-4216-1166 Jean-Sebastien MICHA Jean-Sebastien Micha Example Institute 2028 Data from large facility measurement 2025-04-23T06:00:00Z/2025-04-26T06:00:00Z 2025-04-26T06:00:00Z I CC-BY-4.0 The proposed experiment focuses on studying strain relaxation and defect formation in GaAs/InGaP and GaAs/InGaAs nano-ridge (NR) structures grown on Si wafers using μLaue technique. The integration of III-V semiconductors with Si substrates via Nano-Ridge Engineering (NRE) enables applications such as heterojunction bipolar transistors (HBTs) and laser emitters. Initial investigations have revealed that trench geometry and orientation play a significant role in elastic relaxation, highlighting the need for a detailed strain analysis.The main objective of this experiment is to perform a quantitative analysis of strain relaxation on Nrs, utilizing the μLaue technique on the BM32 beamline at ESRF. The experiment will map the deviatoric strain tensor and investigate relaxation phenomena based on trench width and NR volume. Two types of samples will be studied: one set with varying trench dimensions and NR sizes, and another set representing laser diode structures with multi-quantum well.