2026-06-03T14:48:19Z https://icatplus.esrf.fr/oaipmh/request

oai:icatplus.esrf.fr:inv/2050990063 2025-04-22T06:00:32.688Z

4.2 EI 10.15151/ESRF-ES-2050990063 Vishal SHAH Vishal Shah 0000-0003-0232-4140 Vishal SHAH Vishal Shah 0000-0003-0232-4140 Nadeemullah MAHADIK Nadeemullah Mahadik 0000-0002-6486-2860 Nadeemullah MAHADIK Nadeemullah Mahadik 0000-0002-6486-2860 Arash ESTIRI Arash Estiri Didier WERMEILLE Didier Wermeille 0009-0007-8849-4226 Arash ESTIRI Arash Estiri Example Institute 2028 Data from large facility measurement 2025-04-16T06:00:00Z/2025-04-22T06:00:00Z 2025-04-22T06:00:00Z I CC-BY-4.0 The wide bandgap semiconductor material Silicon Carbide (SiC) is an attractive proposition to replace Silicon (Si) for the development of efficient, robust power electronic devices, with commonplace devices only introduced into the market within the last 5 years. In development, is 20 years behind development when compared to Si, with defects which are sources of failure and inefficiency. One major issue in SiC power electronics devices is the long-term reliability. One fundamental, major contributor to variation of device performance over time is the presence of basal plane dislocations in the starting substrate and its expansion and conversion to Shockley type stacking faults. During a test session at the XMaS Beamline (IH-ME-34), a methodology was found to image SiC layers in diffraction mode with high resolution. We propose use this method to image defects that have undergone thermal stress ex-situ to replicate this mechanism so that it can be further understood.